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| SI3812DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 2.4 1.8 rDS(on) (W) 0.125 @ VGS = 4.5 V 0.200 @ VGS = 2.5 V D LITTLE FOOT Plust D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.48 V @ 0.5 A IF (A) 0.5 TSOP-6 Top View A 3 mm 1 6 5 K G S 2 N/C D K G 3 4 D 2.85 mm Ordering Information: SI3812DV-T1 S N-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71069 S-31725--Rev. E, 18-Aug-03 www.vishay.com TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg PD TA = 25_C TA = 85_C Symbol VDS VKA VGS ID IDM IS IF IFM 5 sec 20 20 "12 2.4 1.7 8 1.05 0.5 8 1.15 0.59 1.0 0.52 Steady State Unit V 2.0 1.4 0.75 0.5 8 0.83 0.53 0.76 0.48 - 55 to 150 _C W A 1 SI3812DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta J ti t A bi t t v 5 sec Device MOSFET Schottky MOSFET Steady St t St d State Schottky MOSFET Schottky Symbol Typical 93 103 Maximum 110 125 150 165 90 95 Unit RthJA Junction-to-Ambienta J ti t A bi t 130 140 _C/W Junction-to-Foot Junction to Foot (MOSFET Drain Schottky Kathode) Drain, Notes a. Surface Mounted on 1" x1" FR4 Board. Steady State RthJF 75 80 MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current (MOSFET + Schottky) On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 2.4 A VGS = 2.5 V, ID = 1.0 A VDS = 5 V, ID = 2.4 A IS = 1.5 A, VGS = 0 V 5 0.100 0.160 5 0.79 1.1 0.125 0.200 W S V 0.6 "100 1 10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.0 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 1 10 30 14 6 30 VDS = 10 V, VGS = 4.5 V, ID = 2.4 A 2.1 0.3 0.4 3.7 17 50 25 12 50 ns W 4.0 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 0.5 IF = 0.5, TJ = 125_C Vr = 20 Vr = 20, TJ = 75_C Vr = 20, TJ = 125_C Min Typ 0.42 0.33 0.002 0.06 1.5 31 Max 0.48 0.4 0.100 1 10 Unit V Maximum Reverse Leakage Current g Irm mA Junction Capacitance www.vishay.com CT Vr = 10 V pF 2 Document Number: 71069 S-31725--Rev. E, 18-Aug-03 SI3812DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 MOSFET 10 Output Characteristics VGS = 4.5 thru 3.5 V Transfer Characteristics TC = - 55_C 8 I D - Drain Current (A) 3V I D - Drain Current (A) 8 25_C 6 2.5 V 4 2V 1.5 V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 6 125_C 4 2 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) 0.5 On-Resistance vs. Drain Current 300 250 C - Capacitance (pF) 200 150 100 Capacitance r DS(on) - On-Resistance ( W ) 0.4 Ciss 0.3 VGS = 2.5 V VGS = 4.5 V 0.1 0.2 Coss 50 Crss 0 0.0 0 1 2 3 4 5 6 7 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 4.5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 2.4 A Gate Charge 1.8 1.6 1.4 1.2 1.0 0.8 0.6 - 50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.4 A 2.7 1.8 0.9 0.0 0.0 0.5 1.0 1.5 2.0 2.5 r DS(on) - On-Resistance (W) (Normalized) 3.6 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71069 S-31725--Rev. E, 18-Aug-03 www.vishay.com 3 SI3812DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.40 MOSFET On-Resistance vs. Gate-to-Source Voltage ID = 2.4 A r DS(on)- On-Resistance ( W ) 0.32 I S - Source Current (A) ID = 1 A 1 TJ = 150_C 0.24 0.16 TJ = 25_C 0.08 0.1 0.00 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) 6 Power (W) 8 Single Pulse Power, Junction-to-Ambient - 0.0 4 - 0.2 2 - 0.4 - 0.6 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71069 S-31725--Rev. E, 18-Aug-03 4 SI3812DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 MOSFET Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 10 I R - Reverse Current (mA) 5 SCHOTTKY Forward Voltage Drop I F - Forward Current (A) 1 TJ = 150_C 1 0.1 20 V 0.01 10 V TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) 150 0.1 0 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage Drop (V) Capacitance CT - Junction Capacitance (pF) 120 90 60 30 0 0 4 8 12 16 20 VKA - Reverse Voltage (V Document Number: 71069 S-31725--Rev. E, 18-Aug-03 www.vishay.com 5 SI3812DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) SCHOTTKY 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 140_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 6 Document Number: 71069 S-31725--Rev. E, 18-Aug-03 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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